Flexible Electronics News

Brewer Science Launches New Silicon-Rich Gapfill Material

Advanced and legacy processes are improved by this next-generation material.

Brewer Science, Inc. announced the launch of OptiStack PL200 series material, a silicon-rich high-aspect ratio gapfill material designed to provide superior planarization, solving problems faced in sacrificial gapfill applications. This material series also facilitates next-generation advanced-node patterning by providing a protective, easily strippable, gapfill material that overcomes challenges with nanosheet architectures.

OptiStack PL200 series material is a spin-on, silicon-rich gapfill material providing extremely low defectivity in comparison to legacy gapfill materials. This material series is designed to provide excellent gapfill of <10-nm trench and via structures, while also providing superior planarization for robust, faithful lithography and etch transfer. The stability of the product provides a long shelf life of 365 days (at 21°C).

OptiStack PL200 series material shows potential in applications, especially in advanced Fin-FET processes and future architectures, such as forksheets, nanosheets/gate-all-around (GAA) and CFET.

“Advanced logic and foundry platform technologies require a high-aspect ratio gapfilling material that protects structures and easily strips without residue,” said Jim Lamb, corporate fellow at Brewer Science. “OptiStack PL200 series material meets this need.”

A traditional plasma cleaning process is insufficient at cleaning deep structures, leading to potential contamination or damage to transistor structures. In forksheet, or nanosheets/gate-all-around transistor structures, cleaning of the horizontal nanosheets is crucial because residual material on or between nanosheets can prevent removal, or deposition, of subsequent atomic layers.

A cleaning with SC1 effectively removes OptiStack PL200 series material and does not damage critical areas when building the N-type metal oxide semiconductor (NMOS) and p-channel metal-oxide semiconductor (PMOS) structures.

Add us as a preferred source on Google

Get the latest Ink World magazine news, insights and analysis in your Google Search and AI experiences.

Keep Up With Our Content. Subscribe To Ink World magazine Newsletters